SPB12N50C3ATMA1
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Infineon Technologies SPB12N50C3ATMA1

Manufacturer No:
SPB12N50C3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB12N50C3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 11.6A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number SPB12N50C3ATMA1 SPB16N50C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 560 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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