SPB12N50C3ATMA1
  • Share:

Infineon Technologies SPB12N50C3ATMA1

Manufacturer No:
SPB12N50C3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB12N50C3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 11.6A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
346

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB12N50C3ATMA1 SPB16N50C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 560 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

HUF75945P3
HUF75945P3
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IXTH2N300P3HV
IXTH2N300P3HV
IXYS
MOSFET N-CH 3000V 2A TO247HV
STP16NF06L
STP16NF06L
STMicroelectronics
MOSFET N-CH 60V 16A TO220AB
IPN50R800CEATMA1
IPN50R800CEATMA1
Infineon Technologies
MOSFET N-CH 500V 7.6A SOT223
SIHB22N65E-T1-GE3
SIHB22N65E-T1-GE3
Vishay Siliconix
N-CHANNEL 650V
TSM170N06CH C5G
TSM170N06CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 38A TO251
IRFZ34STRL
IRFZ34STRL
Vishay Siliconix
MOSFET N-CH 60V 30A D2PAK
IXFC20N80P
IXFC20N80P
IXYS
MOSFET N-CH 800V 11A ISOPLUS220
IRFS4227PBF
IRFS4227PBF
Infineon Technologies
MOSFET N-CH 200V 62A D2PAK
PSMN023-40YLCX
PSMN023-40YLCX
NXP USA Inc.
MOSFET N-CH 40V 24A LFPAK56
AO3481
AO3481
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4A SOT23-3
BUK952R3-40E,127
BUK952R3-40E,127
NXP USA Inc.
MOSFET N-CH 40V 120A TO220AB

Related Product By Brand

BCR 116F E6327
BCR 116F E6327
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
BCR 135L3 E6327
BCR 135L3 E6327
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
IRF6626
IRF6626
Infineon Technologies
MOSFET N-CH 30V 16A DIRECTFET
CY24204ZXC-3
CY24204ZXC-3
Infineon Technologies
IC CLOCK GEN STB 3.3V 16-TSSOP
MB90598GPFR-G-166-ER
MB90598GPFR-G-166-ER
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY90025EPMT-GS-121E1
CY90025EPMT-GS-121E1
Infineon Technologies
IC MCU 120LQFP
MB90347ESPMC-GS-650E1
MB90347ESPMC-GS-650E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB96F348RSBPQC-GSE2
MB96F348RSBPQC-GSE2
Infineon Technologies
IC MCU 16BIT 544KB FLASH 100PQFP
MB9DF125EPMC-GSK5E2
MB9DF125EPMC-GSK5E2
Infineon Technologies
IC MCU 32BIT 1MB FLASH 176LQFP
CY7C1414TV18-250BZC
CY7C1414TV18-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY9AF114NBGL-GK9E1
CY9AF114NBGL-GK9E1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 112BGA
CY90F342ASPFR-GSE1
CY90F342ASPFR-GSE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP