SPB100N06S2-05
  • Share:

Infineon Technologies SPB100N06S2-05

Manufacturer No:
SPB100N06S2-05
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB100N06S2-05 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 100A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.46
51

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB100N06S2-05 SPB100N06S2L-05  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 7530 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

TQM033NB04CR RLG
TQM033NB04CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A PDFN56U
BUK9Y4R8-60E,115
BUK9Y4R8-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
IRFI9530GPBF
IRFI9530GPBF
Vishay Siliconix
MOSFET P-CH 100V 7.7A TO220-3
STW10NK60Z
STW10NK60Z
STMicroelectronics
MOSFET N-CH 600V 10A TO247-3
SI1031R-T1-GE3
SI1031R-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 140MA SC75A
SQS482EN-T1_GE3
SQS482EN-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 16A PPAK1212-8
SQM40022E_GE3
SQM40022E_GE3
Vishay Siliconix
MOSFET N-CH 40V 150A TO263
IRLR3714TRPBF
IRLR3714TRPBF
Infineon Technologies
MOSFET N-CH 20V 36A DPAK
IXTP7N60P
IXTP7N60P
IXYS
MOSFET N-CH 600V 7A TO220AB
NTD80N02T4G
NTD80N02T4G
onsemi
MOSFET N-CH 24V 80A DPAK
NTMFS4C10NBT3G
NTMFS4C10NBT3G
onsemi
MOSFET N-CH 30V 16.4A/46A 5DFN

Related Product By Brand

TD140N22KOFHPSA1
TD140N22KOFHPSA1
Infineon Technologies
SCR MODULE 2200V 250A MODULE
BFP196WE6327
BFP196WE6327
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
IRFZ34NSPBF
IRFZ34NSPBF
Infineon Technologies
MOSFET N-CH 55V 29A D2PAK
IRFZ48ZLPBF
IRFZ48ZLPBF
Infineon Technologies
MOSFET N-CH 55V 61A TO262
AUIRGP50B60PD1E
AUIRGP50B60PD1E
Infineon Technologies
IGBT 600V 75A 390W TO247AD
TLD2326ELXUMA1
TLD2326ELXUMA1
Infineon Technologies
IC LED DRVR LINEAR 120MA 14SSOP
IRU1117-33CSTR
IRU1117-33CSTR
Infineon Technologies
IC REG LINEAR 3.3V 800MA 8SOIC
CY8C29666-24LFXI
CY8C29666-24LFXI
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48QFN
MB90347DASPFV-GS-456E1
MB90347DASPFV-GS-456E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB91F527RSCEQ-GSK5E1
MB91F527RSCEQ-GSK5E1
Infineon Technologies
IC MCU 32B 1.5625MB FLSH 144LQFP
CY7C1049BL-17VC
CY7C1049BL-17VC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 36SOJ
CYD18S72V18-167BGC
CYD18S72V18-167BGC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 484FBGA