SPB02N60C3
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Infineon Technologies SPB02N60C3

Manufacturer No:
SPB02N60C3
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPB02N60C3 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number SPB02N60C3 SPB03N60C3   SPB04N60C3   SPB07N60C3  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type - N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C - 3.2A (Tc) 4.5A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V
Rds On (Max) @ Id, Vgs - 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id - 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs - 17 nC @ 10 V 25 nC @ 10 V 27 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 400 pF @ 25 V 490 pF @ 25 V 790 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 38W (Tc) 50W (Tc) 83W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount
Supplier Device Package - PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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