SPA11N80C3XKSA2
  • Share:

Infineon Technologies SPA11N80C3XKSA2

Manufacturer No:
SPA11N80C3XKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPA11N80C3XKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 11A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3 Isolated Tab
0 Remaining View Similar

In Stock

$3.72
69

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPA11N80C3XKSA2 SPA11N80C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V 1600 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 34W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3-31
Package / Case TO-220-3 Isolated Tab TO-220-3 Full Pack

Related Product By Categories

BUK9675-100A,118
BUK9675-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 23A D2PAK
AUIRLU3114Z
AUIRLU3114Z
Infineon Technologies
AUIRLU3114Z - 20V-40V N-CHANNEL
FDP7N60NZ
FDP7N60NZ
onsemi
MOSFET N-CH 600V 6.5A TO220-3
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1
Infineon Technologies
MOSFET N-CH 200V 11.3A 8TDSON
BSS138Q-7-F
BSS138Q-7-F
Diodes Incorporated
MOSFET N-CH 50V 200MA SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
IPW60R160C6FKSA1
IPW60R160C6FKSA1
Infineon Technologies
MOSFET N-CH 600V 23.8A TO247-3
NVMYS4D6N04CLTWG
NVMYS4D6N04CLTWG
onsemi
MOSFET N-CH 40V 21A/78A LFPAK4
SIHF35N60EF-GE3
SIHF35N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 32A TO220
STP40N20
STP40N20
STMicroelectronics
MOSFET N-CH 200V 40A TO220AB
SI7160DP-T1-E3
SI7160DP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 20A PPAK SO-8
SUM40N02-12P-E3
SUM40N02-12P-E3
Vishay Siliconix
MOSFET N-CH 20V 40A TO263

Related Product By Brand

IDP45E60XKSA1
IDP45E60XKSA1
Infineon Technologies
DIODE GEN PURP 600V 71A TO220-2
TD425N18KOFHPSA2
TD425N18KOFHPSA2
Infineon Technologies
SCR MODULE 1800V 800A MODULE
BSC0921NDIATMA1
BSC0921NDIATMA1
Infineon Technologies
MOSFET 2N-CH 30V 17A/31A TISON8
BSC084P03NS3GATMA1
BSC084P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 14.9A 8TDSON
IPB80P04P4L08ATMA2
IPB80P04P4L08ATMA2
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
IKW75N60H3
IKW75N60H3
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
IR2166STRPBF
IR2166STRPBF
Infineon Technologies
IC PFC/BALLAST CNTL 50KHZ 16SOIC
CY8C20045-24LKXIT
CY8C20045-24LKXIT
Infineon Technologies
IC CAPSENSE 8K FLASH 16 QFN
CY9AF116NAPMC-G-MNE2
CY9AF116NAPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 512KB FLASH 100LQFP
MB90224PF-GT-305-BND
MB90224PF-GT-305-BND
Infineon Technologies
IC MCU 16BIT 96KB MROM 120PQFP
MB96F386RSCPMC-GS-113E2
MB96F386RSCPMC-GS-113E2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 120LQFP
S29WS064RABBHI010
S29WS064RABBHI010
Infineon Technologies
IC FLASH 64MBIT PARALLEL 84FBGA