SPA11N80C3XKSA2
  • Share:

Infineon Technologies SPA11N80C3XKSA2

Manufacturer No:
SPA11N80C3XKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPA11N80C3XKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 11A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3 Isolated Tab
0 Remaining View Similar

In Stock

$3.72
69

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPA11N80C3XKSA2 SPA11N80C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V 1600 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 34W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3-31
Package / Case TO-220-3 Isolated Tab TO-220-3 Full Pack

Related Product By Categories

IRLR3410TRLPBF
IRLR3410TRLPBF
Infineon Technologies
MOSFET N-CH 100V 17A DPAK
FQPF19N10
FQPF19N10
onsemi
MOSFET N-CH 100V 13.6A TO220F
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
DMT6009LSS-13
DMT6009LSS-13
Diodes Incorporated
MOSFET N-CH 60V 10.8A 8SO T&R 2
PMV28ENEAR
PMV28ENEAR
Nexperia USA Inc.
MOSFET N-CH 30V 4.4A TO236AB
IPL60R065C7AUMA1
IPL60R065C7AUMA1
Infineon Technologies
MOSFET HIGH POWER_NEW
DMP2045U-13
DMP2045U-13
Diodes Incorporated
MOSFET P-CH 20V 4.3A SOT23
PJF6NA40_T0_00001
PJF6NA40_T0_00001
Panjit International Inc.
400V N-CHANNEL MOSFET
NTMFS4H02NT3G
NTMFS4H02NT3G
onsemi
MOSFET N-CH 25V 37A/193A 5DFN
IRFR9N20DTRL
IRFR9N20DTRL
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
SI4831DY-T1-E3
SI4831DY-T1-E3
Vishay Siliconix
MOSFET P-CH 30V 5A 8-SOIC
SQ7414AEN-T1_GE3
SQ7414AEN-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 16A PPAK1212-8

Related Product By Brand

IPD30N03S4L09ATMA1
IPD30N03S4L09ATMA1
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
IRFR3707TRPBF
IRFR3707TRPBF
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
IPD096N08N3GBTMA1
IPD096N08N3GBTMA1
Infineon Technologies
MOSFET N-CH 80V 73A TO252-3
IRS21084STRPBF
IRS21084STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14SOIC
IR3507ZMTRPBF
IR3507ZMTRPBF
Infineon Technologies
IC CTRL XPHASE3 20-MLPQ
BGA616H6327XTSA1
BGA616H6327XTSA1
Infineon Technologies
IC AMP CDMA 0HZ-2.7GHZ SOT343-4
BGA612H6327XTSA1
BGA612H6327XTSA1
Infineon Technologies
IC AMP CDMA 0HZ-2.8GHZ SOT343-4
BGSF110GN26E6327XTSA1
BGSF110GN26E6327XTSA1
Infineon Technologies
IC RF SWITCH SP10T 3.8GHZ TSNP26
CY9AF154MABGL-GE1
CY9AF154MABGL-GE1
Infineon Technologies
IC MCU 32BIT 288KB FLASH 96FBGA
STK11C68-SF35TR
STK11C68-SF35TR
Infineon Technologies
IC NVSRAM 64KBIT PARALLEL 28SOIC
STK12C68-L35I
STK12C68-L35I
Infineon Technologies
IC NVSRAM 64KBIT PARALLEL 28LCC
CY7C1545KV18-400BZC
CY7C1545KV18-400BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA