SPA08N50C3XKSA1
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Infineon Technologies SPA08N50C3XKSA1

Manufacturer No:
SPA08N50C3XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPA08N50C3XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 7.6A TO220-FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-31
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number SPA08N50C3XKSA1 SPA08N80C3XKSA1   SPA04N50C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 800 V 560 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V 650mOhm @ 5.1A, 10V 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA 3.9V @ 470µA 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 60 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 1100 pF @ 100 V 470 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 32W (Tc) 40W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-31 PG-TO220-3-31 PG-TO220-3-31
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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