SN7002NE6327
  • Share:

Infineon Technologies SN7002NE6327

Manufacturer No:
SN7002NE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SN7002NE6327 Datasheet
ECAD Model:
-
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
190

Please send RFQ , we will respond immediately.

Similar Products

Part Number SN7002NE6327 SN7002N E6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs - 1.5 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 45 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 360mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-SOT23
Package / Case - TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC109N10NS3GATMA1
BSC109N10NS3GATMA1
Infineon Technologies
MOSFET N-CH 100V 63A TDSON-8-1
IPP80R1K4P7XKSA1
IPP80R1K4P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 4A TO220-3
TPH8R903NL,LQ
TPH8R903NL,LQ
Toshiba Semiconductor and Storage
MOSFET N CH 30V 20A 8SOP
BSC054N04NSGATMA1
BSC054N04NSGATMA1
Infineon Technologies
MOSFET N-CH 40V 17A/81A TDSON
IXFN64N50P
IXFN64N50P
IXYS
MOSFET N-CH 500V 61A SOT227B
DMP3050LVT-7
DMP3050LVT-7
Diodes Incorporated
MOSFET P CH 30V 4.5A TSOT26
NTB6413ANT4G
NTB6413ANT4G
onsemi
MOSFET N-CH 100V 42A D2PAK
IRFF213
IRFF213
Harris Corporation
N-CHANNEL POWER MOSFET
NVTFS4C02NTAG
NVTFS4C02NTAG
onsemi
MOSFET - SINGLE N-CHANNEL POWER,
DMT6012LFV-7
DMT6012LFV-7
Diodes Incorporated
MOSFET N-CH 60V 43.3A PWRDI3333
IRFR5305CPBF
IRFR5305CPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
RJK6015DPK-00#T0
RJK6015DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 600V 21A TO3P

Related Product By Brand

BAV 70 B5003
BAV 70 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BB555H7912XTSA1
BB555H7912XTSA1
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD80
BFS17WE6327
BFS17WE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
IRL1404L
IRL1404L
Infineon Technologies
MOSFET N-CH 40V 160A TO262
SPU03N60C3BKMA1
SPU03N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 3.2A TO251-3
IRG4BC30F-STRL
IRG4BC30F-STRL
Infineon Technologies
IGBT 600V 31A 100W D2PAK
TLE9879QXA20XUMA1
TLE9879QXA20XUMA1
Infineon Technologies
IC MOTOR DRIVER 48VQFN
IRS2118PBF
IRS2118PBF
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8DIP
BTS3205NHUSA1
BTS3205NHUSA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
MB90561APMC-G-269-BNDE1
MB90561APMC-G-269-BNDE1
Infineon Technologies
IC MCU 16BIT 32KB MROM 64LQFP
CY7C1518JV18-300BZXC
CY7C1518JV18-300BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S34ML04G100TFI903
S34ML04G100TFI903
Infineon Technologies
IC FLASH 4GBIT PARALLEL 48TSOP I