Infineon Technologies-SMBT3904UPNE3627 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	330mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	PG-SC74-6

Infineon Technologies SMBT3904UPNE3627