Infineon Technologies-SMBT3904PNH6327XTSA1 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	250mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-PO

Infineon Technologies SMBT3904PNH6327XTSA1