Infineon Technologies-SKB06N60HSATMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	12 A
Current - Collector Pulsed (Icm):	24 A
Vce(on) (Max) @ Vge, Ic:	3.15V @ 15V, 6A
Power - Max:	68 W
Switching Energy:	190µJ
Input Type:	Standard
Gate Charge:	33 nC
Td (on/off) @ 25°C:	11ns/196ns
Test Condition:	400V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr):	100 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2

Infineon Technologies SKB06N60HSATMA1