SIGC61T60NCX1SA3
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Infineon Technologies SIGC61T60NCX1SA3

Manufacturer No:
SIGC61T60NCX1SA3
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SIGC61T60NCX1SA3 Datasheet
ECAD Model:
-
Description:
IGBT 3 CHIP 600V WAFER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:65ns/170ns
Test Condition:300V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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In Stock

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493

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Similar Products

Part Number SIGC61T60NCX1SA3 SIGC81T60NCX1SA3   SIGC61T60NCX1SA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
IGBT Type NPT NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 75 A 100 A 75 A
Current - Collector Pulsed (Icm) 225 A 300 A 225 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A 2.5V @ 15V, 100A 2.5V @ 15V, 75A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C 65ns/170ns 95ns/200ns 65ns/170ns
Test Condition 300V, 75A, 3Ohm, 15V 300V, 100A, 2.2Ohm, 15V 300V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr) - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case Die Die Die
Supplier Device Package Die Die Die

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