Infineon Technologies-SIGC25T60UNX1SA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	90 A
Vce(on) (Max) @ Vge, Ic:	3.15V @ 15V, 30A
Power - Max:	-
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	16ns/122ns
Test Condition:	400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

Infineon Technologies SIGC25T60UNX1SA1