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SIGC109T120R3
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Infineon Technologies SIGC109T120R3

Manufacturer No:
SIGC109T120R3
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SIGC109T120R3 Datasheet
ECAD Model:
-
Description:
INSULATED GATE BIPOLAR TRANSISTO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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In Stock

$9.76
77

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