Infineon Technologies-SIGC100T65R3EX1SA2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	200 A
Current - Collector Pulsed (Icm):	600 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 200A
Power - Max:	-
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

Infineon Technologies SIGC100T65R3EX1SA2