Infineon Technologies-SGP02N120XKSA1106 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	6.2 A
Current - Collector Pulsed (Icm):	9.6 A
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 2A
Power - Max:	62 W
Switching Energy:	160µJ (on), 60µJ (off)
Input Type:	Standard
Gate Charge:	11 nC
Td (on/off) @ 25°C:	23ns/260ns
Test Condition:	800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1

Infineon Technologies SGP02N120XKSA1106