Infineon Technologies-SGD02N120BUMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	6.2 A
Current - Collector Pulsed (Icm):	9.6 A
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 2A
Power - Max:	62 W
Switching Energy:	220µJ
Input Type:	Standard
Gate Charge:	11 nC
Td (on/off) @ 25°C:	23ns/260ns
Test Condition:	800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11

Infineon Technologies SGD02N120BUMA1