Infineon Technologies-SGB15N120ATMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	52 A
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 15A
Power - Max:	198 W
Switching Energy:	1.9mJ
Input Type:	Standard
Gate Charge:	130 nC
Td (on/off) @ 25°C:	18ns/580ns
Test Condition:	800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2

Infineon Technologies SGB15N120ATMA1