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| Part Number | SDT10S60 | SDT12S60 | SDT10S30 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 300 V |
| Current - Average Rectified (Io) | 10A (DC) | 12A (DC) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | 1.7 V @ 12 A | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 350 µA @ 600 V | 400 µA @ 600 V | 200 µA @ 300 V |
| Capacitance @ Vr, F | 350pF @ 0V, 1MHz | 450pF @ 1V, 1MHz | 600pF @ 0V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 |
| Supplier Device Package | PG-TO220-2-2 | PG-TO220-2-2 | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
