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| Part Number | SDB20S30 | SDP20S30 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 300 V | 300 V |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V | 200 µA @ 300 V |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C |
| Mounting Type | Surface Mount | Through Hole |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
| Supplier Device Package | PG-TO220-3-45 | PG-TO220-3-1 |
