ISZ080N10NM6ATMA1
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Infineon Technologies ISZ080N10NM6ATMA1

Manufacturer No:
ISZ080N10NM6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
ISZ080N10NM6ATMA1 Datasheet
ECAD Model:
-
Description:
TRENCH >=100V PG-TSDSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:8.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8 FL
Package / Case:8-PowerTDFN
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In Stock

$1.96
499

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Similar Products

Part Number ISZ080N10NM6ATMA1 ISC080N10NM6ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 75A (Tc) 13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 8.04mOhm @ 20A, 10V 8.05mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.3V @ 36µA 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1800 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN

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