ISZ080N10NM6ATMA1
  • Share:

Infineon Technologies ISZ080N10NM6ATMA1

Manufacturer No:
ISZ080N10NM6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
ISZ080N10NM6ATMA1 Datasheet
ECAD Model:
-
Description:
TRENCH >=100V PG-TSDSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:8.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.96
499

Please send RFQ , we will respond immediately.

Similar Products

Part Number ISZ080N10NM6ATMA1 ISC080N10NM6ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 75A (Tc) 13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 8.04mOhm @ 20A, 10V 8.05mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.3V @ 36µA 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1800 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

AUIRF7647S2TR
AUIRF7647S2TR
Infineon Technologies
MOSFET N-CH 100V 5.9A DIRECTFET
FDB2552
FDB2552
onsemi
MOSFET N-CH 150V 5A/37A TO263AB
IRFP2907ZPBF
IRFP2907ZPBF
Infineon Technologies
MOSFET N-CH 75V 90A TO247AC
IXTK140N20P
IXTK140N20P
IXYS
MOSFET N-CH 200V 140A TO264
APT12057B2LLG
APT12057B2LLG
Microchip Technology
MOSFET N-CH 1200V 22A T-MAX
IRFI530G
IRFI530G
Vishay Siliconix
MOSFET N-CH 100V 9.7A TO220-3
IRLR7807ZCTRRP
IRLR7807ZCTRRP
Infineon Technologies
MOSFET N-CH 30V 43A DPAK
IXTH60N15
IXTH60N15
IXYS
MOSFET N-CH 150V 60A TO247
SIE848DF-T1-E3
SIE848DF-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 60A 10POLARPAK
PSMN011-30YL,115
PSMN011-30YL,115
NXP USA Inc.
MOSFET N-CH 30V 51A LFPAK56
IRFR7446PBF
IRFR7446PBF
Infineon Technologies
MOSFET N-CH 40V 56A TO252
R6007KNJTL
R6007KNJTL
Rohm Semiconductor
MOSFET N-CH 600V 7A LPTS

Related Product By Brand

BGT60EESKITTOBO1
BGT60EESKITTOBO1
Infineon Technologies
RF DEVELOPMENT KIT
DD180N20SHPSA1
DD180N20SHPSA1
Infineon Technologies
MODULE DIODE THY PB34SB-1
TZ600N16KOFHPSA1
TZ600N16KOFHPSA1
Infineon Technologies
THYRISTOR MODULE 1600V 600A
IPA65R095C7XKSA1
IPA65R095C7XKSA1
Infineon Technologies
MOSFET N-CH 650V 12A TO220-FP
IRF3707LPBF
IRF3707LPBF
Infineon Technologies
MOSFET N-CH 30V 62A TO262
SAF-XE164HM-24F80L AA
SAF-XE164HM-24F80L AA
Infineon Technologies
IC MCU 16BIT 192KB FLASH 100LQFP
CY7C68016A-56LFXC
CY7C68016A-56LFXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56VQFN
MB90030PMC-GS-136E1
MB90030PMC-GS-136E1
Infineon Technologies
IC MCU 16BIT FFMC-16F0.35 64LQFP
MB90F456SPMT-GE1
MB90F456SPMT-GE1
Infineon Technologies
IC MCU 16BIT 32KB FLASH 48LQFP
S26KS128SDGBHI030
S26KS128SDGBHI030
Infineon Technologies
IC FLASH 128MBIT PARALLEL 24FBGA
S25FL512SAGMFA011
S25FL512SAGMFA011
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C1318KV18-300BZXC
CY7C1318KV18-300BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA