IST011N06NM5AUMA1
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Infineon Technologies IST011N06NM5AUMA1

Manufacturer No:
IST011N06NM5AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IST011N06NM5AUMA1 Datasheet
ECAD Model:
-
Description:
TRENCH 40<-<100V PG-HSOF-5
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 399A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.3V @ 148µA
Gate Charge (Qg) (Max) @ Vgs:154 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8100 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 313W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-5-1
Package / Case:5-PowerSFN
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Similar Products

Part Number IST011N06NM5AUMA1 IST015N06NM5AUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 399A (Tc) 36A (Ta), 242A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 148µA 3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V 5200 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 313W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-5-1 PG-HSOF-5-1
Package / Case 5-PowerSFN 5-PowerSFN

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