IST007N04NM6AUMA1
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Infineon Technologies IST007N04NM6AUMA1

Manufacturer No:
IST007N04NM6AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IST007N04NM6AUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 54A/440A HSOF-5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:54A (Ta), 440A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:700mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-5-1
Package / Case:5-PowerSFN
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Similar Products

Part Number IST007N04NM6AUMA1 IST006N04NM6AUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C 54A (Ta), 440A (Tc) 58A (Ta), 475A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 100A, 10V 600mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 178 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7900 pF @ 20 V 8800 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc) 3.8W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-5-1 PG-HSOF-5-1
Package / Case 5-PowerSFN 5-PowerSFN

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