IST006N04NM6AUMA1
  • Share:

Infineon Technologies IST006N04NM6AUMA1

Manufacturer No:
IST006N04NM6AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IST006N04NM6AUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 58A/475A HSOF-5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:58A (Ta), 475A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:600mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-5-1
Package / Case:5-PowerSFN
0 Remaining View Similar

In Stock

$4.15
191

Please send RFQ , we will respond immediately.

Similar Products

Part Number IST006N04NM6AUMA1 IST007N04NM6AUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C 58A (Ta), 475A (Tc) 54A (Ta), 440A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 100A, 10V 700mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 20 V 7900 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc) 3.8W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-5-1 PG-HSOF-5-1
Package / Case 5-PowerSFN 5-PowerSFN

Related Product By Categories

IRFP150
IRFP150
Harris Corporation
MOSFET N-CH 100V 41A TO247-3
FQPF5N80
FQPF5N80
Fairchild Semiconductor
MOSFET N-CH 800V 2.8A TO220F
STD86N3LH5
STD86N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
TP0604N3-G
TP0604N3-G
Microchip Technology
MOSFET P-CH 40V 430MA TO92-3
RJK0391DPA-00#J5A
RJK0391DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 50A 8WPAK
STWA30N65DM6AG
STWA30N65DM6AG
STMicroelectronics
MOSFET N-CH 650V 28A TO247
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
SPU02N60S5
SPU02N60S5
Infineon Technologies
SPU02N60 - 600V COOLMOS N-CHANNE
IRFR320
IRFR320
Vishay Siliconix
MOSFET N-CH 400V 3.1A DPAK
IRL3103STRL
IRL3103STRL
Infineon Technologies
MOSFET N-CH 30V 64A D2PAK
SFT1341-C-TL-E
SFT1341-C-TL-E
onsemi
MOSFET P-CH 40V 10A DPAK/TP-FA
2SK2962(T6CANO,A,F
2SK2962(T6CANO,A,F
Toshiba Semiconductor and Storage
MOSFET N-CH TO92MOD

Related Product By Brand

IDW100E60FKSA1
IDW100E60FKSA1
Infineon Technologies
DIODE GEN PURP 600V 150A TO247-3
IRLR3103TRRPBF
IRLR3103TRRPBF
Infineon Technologies
MOSFET N-CH 30V 55A DPAK
2ED300C17SROHSBPSA1
2ED300C17SROHSBPSA1
Infineon Technologies
IGBT MODULE 1700V 30A
SAF-XC866-4FRI 3V BE
SAF-XC866-4FRI 3V BE
Infineon Technologies
IC MCU 8BIT 16KB FLASH 38TSSOP
CY3653
CY3653
Infineon Technologies
KIT DEVELOPMENT FOR PROC
CY37064P84-200JXC
CY37064P84-200JXC
Infineon Technologies
IC CPLD 64MC 6NS 84PLCC
MB89637PF-GT-1415-BND
MB89637PF-GT-1415-BND
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
CY8C3865AXA-015
CY8C3865AXA-015
Infineon Technologies
IC MCU 8BIT 32KB FLASH 100TQFP
S6E2C2AL0AGL2000A
S6E2C2AL0AGL2000A
Infineon Technologies
IC MCU 32BIT 2MB FLASH 216LQFP
CYK256K16SCBU-70BVXI
CYK256K16SCBU-70BVXI
Infineon Technologies
IC PSRAM 4MBIT PARALLEL 48VFBGA
CY14B104L-BA45XIT
CY14B104L-BA45XIT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
CY7C12501KV18-450BZXC
CY7C12501KV18-450BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA