Infineon Technologies-ISS55EP06LMXTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id:	2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:	0.59 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	18 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	400mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT23-3-5
Package / Case:	TO-236-3, SC-59, SOT-23-3

Infineon Technologies ISS55EP06LMXTSA1