Infineon Technologies-ISP25DP06LMSATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:	2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	13.9 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	420 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta), 5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies ISP25DP06LMSATMA1