Infineon Technologies-ISP20EP10LMXTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	650mA (Ta), 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id:	2V @ 78µA
Gate Charge (Qg) (Max) @ Vgs:	3.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	170 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta), 4.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223-4
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies ISP20EP10LMXTSA1