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| Part Number | ISC080N10NM6ATMA1 | ISZ080N10NM6ATMA1 | ISC030N10NM6ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 75A (Tc) | 13A (Ta), 75A (Tc) | 21A (Ta), 179A (Tc) | 15A (Ta), 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | 8V, 10V | 8V, 10V | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 8.05mOhm @ 20A, 10V | 8.04mOhm @ 20A, 10V | 3mOhm @ 50A, 10V | 6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 36µA | 3.3V @ 36µA | 3.3V @ 109µA | 3.3V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | 24 nC @ 10 V | 69 nC @ 10 V | 33 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | 1800 pF @ 50 V | 5200 pF @ 50 V | 2500 pF @ 50 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) | 3W (Ta), 100W (Tc) | 3W (Ta), 208W (Tc) | 3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL | PG-TSDSON-8 FL | PG-TDSON-8 FL | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
