ISC0702NLSATMA1
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Infineon Technologies ISC0702NLSATMA1

Manufacturer No:
ISC0702NLSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
ISC0702NLSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 23A/135A TDSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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Similar Products

Part Number ISC0702NLSATMA1 ISC0703NLSATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 135A (Tc) 13A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 6.9mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.3V @ 38µA 2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V 1400 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 3W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN

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