ISC046N04NM5ATMA1
  • Share:

Infineon Technologies ISC046N04NM5ATMA1

Manufacturer No:
ISC046N04NM5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
ISC046N04NM5ATMA1 Datasheet
ECAD Model:
-
Description:
40V 4.6M OPTIMOS MOSFET SUPERSO8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.43
643

Please send RFQ , we will respond immediately.

Similar Products

Part Number ISC046N04NM5ATMA1 ISC036N04NM5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 77A (Tc) 21A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 35A, 10V 3.6mOhm @ 49A, 10V
Vgs(th) (Max) @ Id 3.4V @ 17µA 3.4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 20 V 2000 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 50W (Tc) 3W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

SPD50N03S2-07 G
SPD50N03S2-07 G
Infineon Technologies
N-CHANNEL POWER MOSFET
HUF75344A3
HUF75344A3
Fairchild Semiconductor
MOSFET N-CH 55V 75A TO3P
SIA413DJ-T1-GE3
SIA413DJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 12A PPAK SC70-6
SI3457CDV-T1-GE3
SI3457CDV-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 5.1A 6TSOP
IXTT90P10P
IXTT90P10P
IXYS
MOSFET P-CH 100V 90A TO268
CSD17579Q3AT
CSD17579Q3AT
Texas Instruments
MOSFET N-CH 30V 20A 8VSON
IRF9520STRL
IRF9520STRL
Vishay Siliconix
MOSFET P-CH 100V 6.8A D2PAK
IXTP38N15T
IXTP38N15T
IXYS
MOSFET N-CH 150V 38A TO220AB
SIE830DF-T1-GE3
SIE830DF-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 50A 10POLARPAK
IRFH8330TR2PBF
IRFH8330TR2PBF
Infineon Technologies
MOSFET N-CH 30V 14A 5X6 PQFN
BSS7728NH6327XTSA1
BSS7728NH6327XTSA1
Infineon Technologies
MOSFET N-CH 60V 200MA SOT23-3
IRF7342D2TRPBF
IRF7342D2TRPBF
Infineon Technologies
MOSFET P-CH 55V 3.4A 8-SOIC

Related Product By Brand

BAR6302WH6327
BAR6302WH6327
Infineon Technologies
PIN DIODE, 50V V(BR)
IPD14N06S280ATMA2
IPD14N06S280ATMA2
Infineon Technologies
MOSFET N-CH 55V 17A TO252-31
IRG8P75N65UD1PBF
IRG8P75N65UD1PBF
Infineon Technologies
IGBT 650V 75A CO-PAK-247
SAF-XE167GM-48F80L AA
SAF-XE167GM-48F80L AA
Infineon Technologies
IC MCU 16BIT 384KB FLASH 144LQFP
PEB 3265 F V1.5
PEB 3265 F V1.5
Infineon Technologies
IC TELECOM INTERFACE TQFP-64
98-0283
98-0283
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 8SO
CY9AFB44LBPMC1-G-JNE2
CY9AFB44LBPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64LQFP
MB89637RPF-G-641-BND
MB89637RPF-G-641-BND
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
MB89925PF-G-193-BND
MB89925PF-G-193-BND
Infineon Technologies
IC MCU 8BIT 16KB MROM 80PQFP
CY9BF322LPMC-G-MNE2
CY9BF322LPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 160KB FLASH 64LQFP
CY7C1518UV18-300BZXC
CY7C1518UV18-300BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C25702KV18-500BZXC
CY7C25702KV18-500BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA