ISC036N04NM5ATMA1
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Infineon Technologies ISC036N04NM5ATMA1

Manufacturer No:
ISC036N04NM5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
ISC036N04NM5ATMA1 Datasheet
ECAD Model:
-
Description:
40V 3.6M OPTIMOS MOSFET SUPERSO8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:3.4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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Similar Products

Part Number ISC036N04NM5ATMA1 ISC046N04NM5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 98A (Tc) 19A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 49A, 10V 4.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.4V @ 23µA 3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 20 V 1400 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 63W (Tc) 3W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN

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