Infineon Technologies-ISC012N04NM6ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	36A (Ta), 232A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 747µA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4600 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8 FL
Package / Case:	8-PowerTDFN

Infineon Technologies ISC012N04NM6ATMA1