IRS2106PBF
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Infineon Technologies IRS2106PBF

Manufacturer No:
IRS2106PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRS2106PBF Datasheet
ECAD Model:
-
Description:
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:High-Side or Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.5V
Current - Peak Output (Source, Sink):290mA, 600mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):100ns, 35ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
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$3.83
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Similar Products

Part Number IRS2106PBF IRS2106SPBF   IRS2186PBF   IRS2109PBF   IRS2108PBF   IRS2101PBF   IRS2103PBF   IRS2104PBF   IRS21064PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Active Discontinued at Digi-Key
Driven Configuration High-Side or Low-Side High-Side or Low-Side High-Side or Low-Side Half-Bridge Half-Bridge High-Side or Low-Side Half-Bridge Half-Bridge High-Side or Low-Side
Channel Type Independent Independent Independent Synchronous Independent Independent Independent Synchronous Independent
Number of Drivers 2 2 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA 290mA, 600mA 4A, 4A 290mA, 600mA 290mA, 600mA 290mA, 600mA 290mA, 600mA 290mA, 600mA 290mA, 600mA
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 100ns, 35ns 100ns, 35ns 22ns, 18ns 100ns, 35ns 100ns, 35ns 70ns, 35ns 70ns, 35ns 70ns, 35ns 100ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 14-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP 8-SOIC 8-PDIP 8-PDIP 8-PDIP 8-PDIP 8-PDIP 8-PDIP 14-DIP

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