IRLZ44NPBF
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Infineon Technologies IRLZ44NPBF

Manufacturer No:
IRLZ44NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLZ44NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 47A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRLZ44NPBF IRLZ44PBF   IRLZ44ZPBF   IRLZ44SPBF   IRLZ44NSPBF   IRLZ24NPBF   IRLZ34NPBF   IRLZ44NLPBF  
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs Active Discontinued at Digi-Key Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 55 V 60 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 50A (Tc) 51A (Tc) 50A (Tc) 47A (Tc) 18A (Tc) 30A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V 4.5V, 10V 4V, 5V 4V, 10V 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V 28mOhm @ 31A, 5V 13.5mOhm @ 31A, 10V 28mOhm @ 31A, 5V 22mOhm @ 25A, 10V 60mOhm @ 11A, 10V 35mOhm @ 16A, 10V 22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 5 V 66 nC @ 5 V 36 nC @ 5 V 66 nC @ 5 V 48 nC @ 5 V 15 nC @ 5 V 25 nC @ 5 V 48 nC @ 5 V
Vgs (Max) ±16V ±10V ±16V ±10V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3300 pF @ 25 V 1620 pF @ 25 V 3300 pF @ 25 V 1700 pF @ 25 V 480 pF @ 25 V 880 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 110W (Tc) 150W (Tc) 80W (Tc) 3.7W (Ta), 150W (Tc) 3.8W (Ta), 110W (Tc) 45W (Tc) 68W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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