IRLU7843-701PBF
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Infineon Technologies IRLU7843-701PBF

Manufacturer No:
IRLU7843-701PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLU7843-701PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 161A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:161A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4380 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:I-PAK (LF701)
Package / Case:TO-252-4, DPak (3 Leads + Tab)
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Similar Products

Part Number IRLU7843-701PBF IRLU7833-701PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 161A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 15A, 10V 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V 50 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4380 pF @ 15 V 4010 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package I-PAK (LF701) I-PAK (LF701)
Package / Case TO-252-4, DPak (3 Leads + Tab) TO-252-4, DPak (3 Leads + Tab)

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