IRLU3705ZPBF
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Infineon Technologies IRLU3705ZPBF

Manufacturer No:
IRLU3705ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLU3705ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 42A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRLU3705ZPBF IRLU3715ZPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 20 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 42A, 10V 11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 5 V 11 nC @ 4.5 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 810 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 130W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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