IRLU3103
  • Share:

Infineon Technologies IRLU3103

Manufacturer No:
IRLU3103
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLU3103 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 55A I-PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
167

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLU3103 IRLU3303  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 33A, 10V 31mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V 26 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V 870 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 107W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

CMUDM7005 TR PBFREE
CMUDM7005 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 20V 650MA SOT523
PJQ4408P-AU_R2_000A1
PJQ4408P-AU_R2_000A1
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
TP2535N3-G
TP2535N3-G
Microchip Technology
MOSFET P-CH 350V 86MA TO92-3
IRFZ40PBF-BE3
IRFZ40PBF-BE3
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
IPZ40N04S5L7R4ATMA1
IPZ40N04S5L7R4ATMA1
Infineon Technologies
MOSFET N-CH 40V 40A 8TSDSON
IPB80N06S2L07ATMA3
IPB80N06S2L07ATMA3
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
SQJ402EP-T1_BE3
SQJ402EP-T1_BE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) 175C MOSFE
NVMFS4C01NWFT3G
NVMFS4C01NWFT3G
onsemi
MOSFET N-CH 30V 49A/319A 5DFN
IRF9520S
IRF9520S
Vishay Siliconix
MOSFET P-CH 100V 6.8A D2PAK
IXTH20N60
IXTH20N60
IXYS
MOSFET N-CH 600V 20A TO247
IRFU120Z
IRFU120Z
Infineon Technologies
MOSFET N-CH 100V 8.7A IPAK
IRLU3103PBF
IRLU3103PBF
Infineon Technologies
MOSFET N-CH 30V 55A I-PAK

Related Product By Brand

BA885E6327
BA885E6327
Infineon Technologies
BA885 - PIN DIODE
IPP320N20N3GXKSA1
IPP320N20N3GXKSA1
Infineon Technologies
MOSFET N-CH 200V 34A TO220-3
IPB050N06NGATMA1
IPB050N06NGATMA1
Infineon Technologies
MOSFET N-CH 60V 100A D2PAK
AUIRFS8408-7TRR
AUIRFS8408-7TRR
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
IKW75N60TFKSA1
IKW75N60TFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
IRGSL6B60KPBF
IRGSL6B60KPBF
Infineon Technologies
IGBT 600V 13A 90W TO262
IRG4BC20SPBFXKMA1
IRG4BC20SPBFXKMA1
Infineon Technologies
IGBT 600V 19A 60W TO220-3
XC2361E136F128LAAKXUMA1
XC2361E136F128LAAKXUMA1
Infineon Technologies
IC MCU 16/32BIT 1.06MB FLASH
CY2309SI-1H
CY2309SI-1H
Infineon Technologies
IC CLK ZDB 9OUT 133MHZ 16SOIC
CY7C1329H-166AXC
CY7C1329H-166AXC
Infineon Technologies
IC SRAM 2MBIT PARALLEL 100TQFP
CY14E101Q2A-SXI
CY14E101Q2A-SXI
Infineon Technologies
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
CY9BF466RPMC-GNE2
CY9BF466RPMC-GNE2
Infineon Technologies
IC MCU 32BIT FLASH 120-LQFP