IRLU2905ZPBF
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Infineon Technologies IRLU2905ZPBF

Manufacturer No:
IRLU2905ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLU2905ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 42A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRLU2905ZPBF IRLU2905PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 13.5mOhm @ 36A, 10V 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 5 V 48 nC @ 5 V
Vgs (Max) ±16V -
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 25 V 1700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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