IRLSL4030PBF
  • Share:

Infineon Technologies IRLSL4030PBF

Manufacturer No:
IRLSL4030PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLSL4030PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 180A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:11360 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$5.15
146

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLSL4030PBF IRLS4030PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 110A, 10V 4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 4.5 V 130 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 11360 pF @ 50 V 11360 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 370W (Tc) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-262 D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQA18N50V2
FQA18N50V2
Fairchild Semiconductor
MOSFET N-CH 500V 20A TO3P
STP12NK30Z
STP12NK30Z
STMicroelectronics
MOSFET N-CH 300V 9A TO220AB
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 5.9A TO236
BSS84AKMB,315
BSS84AKMB,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006B-3
2SK160A-T1B-A
2SK160A-T1B-A
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
FCP099N65S3
FCP099N65S3
onsemi
MOSFET N-CH 650V 30A TO220-3
IXFR32N100P
IXFR32N100P
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
IPP037N06L3G
IPP037N06L3G
Infineon Technologies
MOSFET N-CH 60V 90A TO220-3
IRF7521D1TR
IRF7521D1TR
Infineon Technologies
MOSFET N-CH 20V 2.4A MICRO8
SPD22N08S2L-50
SPD22N08S2L-50
Infineon Technologies
MOSFET N-CH 75V 25A TO252-3
BSB014N04LX3GXUMA1
BSB014N04LX3GXUMA1
Infineon Technologies
MOSFET N-CH 40V 36A/180A 2WDSON
SIS612EDNT-T1-GE3
SIS612EDNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A PPAK1212-8S

Related Product By Brand

PTF140451F V1
PTF140451F V1
Infineon Technologies
IC FET RF LDMOS 45W H-31265
BSC0804LSATMA1
BSC0804LSATMA1
Infineon Technologies
MOSFET N-CH 100V 40A TDSON-8-6
IPB65R190CFDAATMA1
IPB65R190CFDAATMA1
Infineon Technologies
MOSFET N-CH 650V 17.5A D2PAK
IPP60R125C6
IPP60R125C6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 3
BGA628L7E6327
BGA628L7E6327
Infineon Technologies
SIGE GPS LOW NOISE AMPLIFIER
CY3250-27XXX
CY3250-27XXX
Infineon Technologies
KIT ICE POD FOR CY8C27 DIP
CY8CKIT-149
CY8CKIT-149
Infineon Technologies
PSOC 4100S PLUS PROTOTYPING KIT
MB90347ASPMC-GS-282E1
MB90347ASPMC-GS-282E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY90F456PMCR-G-N9E1
CY90F456PMCR-G-N9E1
Infineon Technologies
IC MCU 16BIT 32KB FLASH 48LQFP
CY9AF116MAPMC-G-MNE2
CY9AF116MAPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 512KB FLASH 80LQFP
CY7C09179V-12AXC
CY7C09179V-12AXC
Infineon Technologies
IC SRAM 288KBIT PARALLEL 100TQFP
S29CD016J0MFAM012
S29CD016J0MFAM012
Infineon Technologies
IC FLASH 16MBIT PARALLEL 80FBGA