IRLR9343-701PBF
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Infineon Technologies IRLR9343-701PBF

Manufacturer No:
IRLR9343-701PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR9343-701PBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 20A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:I-PAK (LF701)
Package / Case:TO-252-4, DPak (3 Leads + Tab)
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Similar Products

Part Number IRLR9343-701PBF IRLR4343-701PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 3.4A, 10V 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V 740 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 79W (Tc) 79W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package I-PAK (LF701) I-PAK (LF701)
Package / Case TO-252-4, DPak (3 Leads + Tab) TO-252-4, DPak (3 Leads + Tab)

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