IRLR8729PBF
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Infineon Technologies IRLR8729PBF

Manufacturer No:
IRLR8729PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR8729PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 58A D-PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR8729PBF IRLR8721PBF   IRLR8726PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 65A (Tc) 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 25A, 10V 8.4mOhm @ 25A, 10V 5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 25µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V 13 nC @ 4.5 V 23 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V 1030 pF @ 15 V 2150 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 55W (Tc) 65W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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