IRLR8259PBF
  • Share:

Infineon Technologies IRLR8259PBF

Manufacturer No:
IRLR8259PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR8259PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 57A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 13 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
180

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLR8259PBF IRLR8256PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 21A, 10V 5.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 13 V 1470 pF @ 13 V
FET Feature - -
Power Dissipation (Max) 48W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPD60R400CEAUMA1
IPD60R400CEAUMA1
Infineon Technologies
MOSFET N-CH 600V 14.7A TO252
UPA2734GR-E1-AT
UPA2734GR-E1-AT
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
FDW258P
FDW258P
Fairchild Semiconductor
MOSFET P-CH 12V 9A 8TSSOP
TSM60NB099PW C1G
TSM60NB099PW C1G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 38A TO247
DMN95H8D5HCT
DMN95H8D5HCT
Diodes Incorporated
MOSFET N-CH 950V 2.5A TO220AB
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
DMN3071LFR4-7
DMN3071LFR4-7
Diodes Incorporated
MOSFET N-CH 30V 3.4A 3DFN
IRL5602L
IRL5602L
Infineon Technologies
MOSFET P-CH 20V 24A TO262
IRFZ44VSTRR
IRFZ44VSTRR
Infineon Technologies
MOSFET N-CH 60V 55A D2PAK
IRLR2705PBF
IRLR2705PBF
Infineon Technologies
MOSFET N-CH 55V 28A DPAK
IRLS3813PBF
IRLS3813PBF
Infineon Technologies
MOSFET N-CH 30V 160A D2PAK
R6035KNZ1C9
R6035KNZ1C9
Rohm Semiconductor
MOSFET N-CHANNEL 600V 35A TO247

Related Product By Brand

BAT63-07WE6327
BAT63-07WE6327
Infineon Technologies
MIXER DIODE, LOW BARRIER
IPP90R800C3XKSA1
IPP90R800C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 6.9A TO220-3
IR11662SPBF
IR11662SPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE 8SOIC
CY22150FZXIT
CY22150FZXIT
Infineon Technologies
IC CLOCK GEN PROG 16-TSSOP
CY24488ZXC-001T
CY24488ZXC-001T
Infineon Technologies
IC CLOCK GENERATOR
MB90349CASPFV-GS-738E1
MB90349CASPFV-GS-738E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB90427GAVPF-GS-344E1
MB90427GAVPF-GS-344E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
CY90F548GSPMC-GE1
CY90F548GSPMC-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
CY90F347CASPFR-GSE1
CY90F347CASPFR-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY62137FV30LL-45BVI
CY62137FV30LL-45BVI
Infineon Technologies
IC SRAM 2MBIT PARALLEL 48VFBGA
STK14CA8-RF25I
STK14CA8-RF25I
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
S29GL256P10FFIS20
S29GL256P10FFIS20
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA