IRLR8103VTRL
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Infineon Technologies IRLR8103VTRL

Manufacturer No:
IRLR8103VTRL
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRLR8103VTRL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 91A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:91A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number IRLR8103VTRL IRLR8103VTRR   IRLR8103TRL  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 91A (Tc) 91A (Tc) 89A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V 27 nC @ 5 V 50 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2672 pF @ 16 V -
FET Feature - - -
Power Dissipation (Max) 115W (Tc) 115W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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