Infineon Technologies-IRLR6225PBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	4mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id:	1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	72 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	3770 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	63W (Tc)
Operating Temperature:	-50°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Infineon Technologies IRLR6225PBF