IRLR4343TRL
  • Share:

Infineon Technologies IRLR4343TRL

Manufacturer No:
IRLR4343TRL
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRLR4343TRL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 26A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
409

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLR4343TRL IRLR4343TRR   IRLR4343TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 26A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 42 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 50 V 740 pF @ 50 V 740 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 79W (Tc) 79W (Tc) 79W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

PMV48XP/MI215
PMV48XP/MI215
NXP USA Inc.
P-CHANNEL MOSFET
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
APT20M38SVRG
APT20M38SVRG
Microchip Technology
MOSFET N-CH 200V 67A D3PAK
IRFR6215TRPBF
IRFR6215TRPBF
Infineon Technologies
MOSFET P-CH 150V 13A DPAK
TSM2309CX RFG
TSM2309CX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 60V 3.1A SOT23
FDN304PZ
FDN304PZ
onsemi
MOSFET P-CH 20V 2.4A SUPERSOT3
IRFS17N20DTRL
IRFS17N20DTRL
Infineon Technologies
MOSFET N-CH 200V 16A D2PAK
IRLU3715ZPBF
IRLU3715ZPBF
Infineon Technologies
MOSFET N-CH 20V 49A I-PAK
SIB413DK-T1-GE3
SIB413DK-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 9A PPAK SC75-6
NTD5803NT4G
NTD5803NT4G
onsemi
MOSFET N-CH 40V 76A DPAK
STF34NM60N
STF34NM60N
STMicroelectronics
MOSFET N-CH 600V 31.5A TO220FP
SIA850DJ-T1-GE3
SIA850DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 190V 950MA PPAK

Related Product By Brand

IPG20N06S4L11ATMA2
IPG20N06S4L11ATMA2
Infineon Technologies
MOSFET_)40V 60V)
IRFR812TRPBF
IRFR812TRPBF
Infineon Technologies
MOSFET N-CH 500V 3.6A DPAK
2PS13512E43W35222NOSA1
2PS13512E43W35222NOSA1
Infineon Technologies
MODULE IGBT STACK A-PS3-1
IRGP4690D-EPBF
IRGP4690D-EPBF
Infineon Technologies
IGBT 600V 140A 454W TO247AD
TLE9843QXXUMA1
TLE9843QXXUMA1
Infineon Technologies
EMBEDDED POWER
BGA8V1BN6E6327XTSA1
BGA8V1BN6E6327XTSA1
Infineon Technologies
IC RF AMP 3.4GHZ-3.8GHZ TSNP6-2
TLE4998C8XUMA1
TLE4998C8XUMA1
Infineon Technologies
SENSOR HALL OPEN DRAIN/PWM TDSO8
CY62147GE18-55ZSXIT
CY62147GE18-55ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
CY7C1512SV18-250BZC
CY7C1512SV18-250BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S25FL032P0XMFB000
S25FL032P0XMFB000
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 16SOIC
CY7C1615KV18-300BZXI
CY7C1615KV18-300BZXI
Infineon Technologies
NO WARRANTY
CY91213APMC-GS-227E1
CY91213APMC-GS-227E1
Infineon Technologies
IC MCU FLASH