IRLR3915PBF
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Infineon Technologies IRLR3915PBF

Manufacturer No:
IRLR3915PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3915PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 30A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1870 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR3915PBF IRLR3715PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 17 nC @ 4.5 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 25 V 1060 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) 3.8W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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