IRLR3715
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Infineon Technologies IRLR3715

Manufacturer No:
IRLR3715
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3715 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR3715 IRLR3715Z   IRLR3714  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 49A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 11 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 810 pF @ 10 V 670 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 40W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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