IRLR3715
  • Share:

Infineon Technologies IRLR3715

Manufacturer No:
IRLR3715
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3715 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
477

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLR3715 IRLR3715Z   IRLR3714  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 49A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 11 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 810 pF @ 10 V 670 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 40W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPI60R385CP
IPI60R385CP
Infineon Technologies
N-CHANNEL POWER MOSFET
IXTP16N50P
IXTP16N50P
IXYS
MOSFET N-CH 500V 16A TO220AB
BSS123LT1G
BSS123LT1G
onsemi
MOSFET N-CH 100V 170MA SOT23-3
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
BSC057N08NS3GATMA1
BSC057N08NS3GATMA1
Infineon Technologies
MOSFET N-CH 80V 16A/100A TDSON
CSD19531KCS
CSD19531KCS
Texas Instruments
MOSFET N-CH 100V 100A TO220-3
IPD60R360P7SAUMA1
IPD60R360P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 9A TO252-3
SPI07N60S5
SPI07N60S5
Infineon Technologies
N-CHANNEL POWER MOSFET
FQD2N60CTM-WS
FQD2N60CTM-WS
onsemi
MOSFET N-CH 600V 1.9A DPAK
IRFR2407TRL
IRFR2407TRL
Infineon Technologies
MOSFET N-CH 75V 42A DPAK
AUIRLS3036
AUIRLS3036
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
PJD2NA90_L2_00001
PJD2NA90_L2_00001
Panjit International Inc.
900V N-CHANNEL MOSFET

Related Product By Brand

SMBTA56E6327HTSA1
SMBTA56E6327HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT-23
IRFS7434TRL7PP
IRFS7434TRL7PP
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK-7
BTS282ZE3230
BTS282ZE3230
Infineon Technologies
N-CHANNEL POWER MOSFET
IPL65R420E6AUMA1
IPL65R420E6AUMA1
Infineon Technologies
MOSFET N-CH 650V 10.1A THIN-PAK
FD200R12KE3HOSA1
FD200R12KE3HOSA1
Infineon Technologies
IGBT MODULE 1200V 1050W
SGW30N60HS
SGW30N60HS
Infineon Technologies
IGBT, 41A, 600V, N-CHANNEL
B161PILFCAXT
B161PILFCAXT
Infineon Technologies
IC MCU 16BIT ROMLESS 100TQFP
TLF50281ELXUMA1
TLF50281ELXUMA1
Infineon Technologies
IC REG BUCK 5V 500MA 14SSOP
TLE8264EXUMA4
TLE8264EXUMA4
Infineon Technologies
IC TRANSCEIVER DSO36-38
TLE4955CE4XAMA1
TLE4955CE4XAMA1
Infineon Technologies
MAG SWITCH SPEC PURP SSO-2-53
MB90548GSPMC-G-137-BNDE1
MB90548GSPMC-G-137-BNDE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY9BF321LPMC-G-MNE2
CY9BF321LPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 64LQFP