IRLR3714
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Infineon Technologies IRLR3714

Manufacturer No:
IRLR3714
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3714 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 36A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR3714 IRLR3715   IRLR3714Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 54A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V 17 nC @ 4.5 V 7.1 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 10 V 1060 pF @ 10 V 560 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 47W (Tc) 3.8W (Ta), 71W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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