IRLR3636TRPBF
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Infineon Technologies IRLR3636TRPBF

Manufacturer No:
IRLR3636TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRLR3636TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 50A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3779 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):143W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$2.17
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Similar Products

Part Number IRLR3636TRPBF IRLR3636TRLPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 50A, 10V 6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 4.5 V 49 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 3779 pF @ 50 V 3779 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 143W (Tc) 143W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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