IRLR3410PBF
  • Share:

Infineon Technologies IRLR3410PBF

Manufacturer No:
IRLR3410PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3410PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 17A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLR3410PBF IRLR3410CPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V -
Rds On (Max) @ Id, Vgs 105mOhm @ 10A, 10V 105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V 34 nC @ 5 V
Vgs (Max) ±16V -
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 79W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRL540NPBF
IRL540NPBF
Infineon Technologies
MOSFET N-CH 100V 36A TO220AB
IPI034NE7N3G
IPI034NE7N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
FDS6294
FDS6294
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
DMN13H750S-7
DMN13H750S-7
Diodes Incorporated
MOSFET N-CH 130V 1A SOT23
IXFP3N120
IXFP3N120
IXYS
MOSFET N-CH 1200V 3A TO220AB
SIHA180N60E-GE3
SIHA180N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 19A TO220
APT6038BFLLG
APT6038BFLLG
Microchip Technology
MOSFET N-CH 600V 17A TO247
IRF3707ZL
IRF3707ZL
Infineon Technologies
MOSFET N-CH 30V 59A TO262
SIR890DP-T1-GE3
SIR890DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A PPAK SO-8
TPC6104(TE85L,F,M)
TPC6104(TE85L,F,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5.5A VS-6
SI4684DY-T1-GE3
SI4684DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 16A 8SO
UPA2813T1L-E1-AT
UPA2813T1L-E1-AT
Renesas Electronics America Inc
MOSFET P-CH 30V 27A 8HVSON

Related Product By Brand

IDH02G65C5XKSA1
IDH02G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO220-2
BSL308PEL6327HTSA1
BSL308PEL6327HTSA1
Infineon Technologies
MOSFET 2P-CH 30V 2A 6TSOP
AUIRF9952QTR
AUIRF9952QTR
Infineon Technologies
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
BSC060P03NS3EGATMA1
BSC060P03NS3EGATMA1
Infineon Technologies
MOSFET P-CH 30V 17.7/100A 8TDSON
AUIRF7478Q
AUIRF7478Q
Infineon Technologies
MOSFET N-CH 60V 7A 8SO
FZ1200R17HP4HOSA2
FZ1200R17HP4HOSA2
Infineon Technologies
IGBT MOD 1700V 1200A 7800W
PEB2091NV5.3
PEB2091NV5.3
Infineon Technologies
ISDN ECHO-CANCELLATION CIRCUIT-Q
BTN7930S
BTN7930S
Infineon Technologies
IC MOTOR DRIVER 8V-18V TO220-7
PVT312S-T
PVT312S-T
Infineon Technologies
SSR RELAY SPST-NO 190MA 0-250V
CY96F613ABPMC-GS-UJE1
CY96F613ABPMC-GS-UJE1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
CY14B104N-BA25XI
CY14B104N-BA25XI
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
CY7C1061DV33-10BV1XI
CY7C1061DV33-10BV1XI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA