IRLR3410CPBF
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Infineon Technologies IRLR3410CPBF

Manufacturer No:
IRLR3410CPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR3410CPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 17A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR3410CPBF IRLR3410PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 10A, 10V 105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V 34 nC @ 5 V
Vgs (Max) - ±16V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 79W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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