IRLR2705PBF
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Infineon Technologies IRLR2705PBF

Manufacturer No:
IRLR2705PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR2705PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 28A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:40mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR2705PBF IRLR2905PBF   IRLR2703PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 42A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 17A, 10V 27mOhm @ 25A, 10V 45mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 5 V 48 nC @ 5 V 15 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1700 pF @ 25 V 450 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 110W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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